Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

Advanced Planar Technology

Low On-Resistance

Dual N and P Channel MOSFET

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Lead-Free, RoHS Compliant

Automotive Qualified*