位置：首页 > IC中文资料第374页 > IRF7309QPBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF7309QPBF | HEXFET Power MOSFET 文件：1.97438 Mbytes Page：11 Pages | IRF |   | |
T-1 Subminiature Lamps T-1¼ Subminiature Lamps | GILWAY | | ||
Advanced Planar Technology Low On-Resistance Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET pow | IRF | | ||
Advanced Planar Technology Low On-Resistance Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET pow | IRF | | ||
Wire-Thread-Inserts 文件：102.37 Kbytes Page：3 Pages | V-COIL | | ||
AUTOMOTIVE GRADE 文件：462.33 Kbytes Page：12 Pages | Infineon 英飞凌 | |
IRF7309QPBF产品属性
- 类型
描述
- 型号
IRF7309QPBF
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
SO-8 |
7500 |
||||
IR |
17+ |
SO-8 |
6200 |
100%原装正品现货 |
|||
IR |
2016+ |
SOP8 |
6528 |
房间原装进口现货假一赔十 |
|||
IR |
23+ |
SO8 |
5000 |
原装正品,假一罚十 |
|||
IR |
2020+ |
SOP-8 |
30000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
24+ |
SOP8 |
2535 |
原装现货假一赔十 |
|||
IR |
24+ |
SOIC-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
SOIC-8 |
9600 |
原装现货,优势供应,支持实单! |
|||
IR |
22+ |
SOP-8 |
8000 |
原装正品支持实单 |
|||
IR |
23+ |
SOP-8 |
8000 |
只做原装现货 |
IRF7309QPBF规格书下载地址
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DdatasheetPDF页码索引
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