位置：首页 > IC中文资料第374页 > IRF7309QPBF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF7309QPBF | HEXFET Power MOSFET 文件：1.97438 Mbytes Page：11 Pages | IRF |   | |
IRF7309QPBF | HEXFET Power MOSFET | Infineon 英飞凌 | | |
T-1 Subminiature Lamps T-1¼ Subminiature Lamps | GILWAY | | ||
Advanced Planar Technology Low On-Resistance Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET pow | IRF | | ||
Advanced Planar Technology Low On-Resistance Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET pow | IRF | | ||
Wire-Thread-Inserts 文件：102.37 Kbytes Page：3 Pages | V-COIL | | ||
AUTOMOTIVE GRADE 文件：462.33 Kbytes Page：12 Pages | Infineon 英飞凌 | |
IRF7309QPBF产品属性
- 类型
描述
- 型号
IRF7309QPBF
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
23+ |
SOP-8 |
67084 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
23+ |
SOP-8 |
8000 |
只做原装现货 |
|||
IR |
1923+ |
SOP8 |
5000 |
正品原装品质假一赔十 |
|||
VBSEMI/台湾微碧 |
23+ |
SOIC-8 |
50000 |
全新原装正品现货,支持订货 |
|||
IOR |
23+ |
SO-8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
IR |
24+ |
SO-8 |
7500 |
||||
IR |
18+ |
SOIC-8 |
23648 |
全新原装现货,可出样品,可开增值税发票 |
|||
IR |
05+ |
原厂原装 |
37216 |
只做全新原装真实现货供应 |
|||
IR |
24+ |
SOIC-8 |
9600 |
原装现货,优势供应,支持实单! |
|||
IR |
22+ |
SOP-8 |
8000 |
原装正品支持实单 |
IRF7309QPBF规格书下载地址
IRF7309QPBF参数引脚图相关
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- IRF7309TRPBF-CUT TAPE
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DdatasheetPDF页码索引
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