Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free