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型号 功能描述 生产厂家 企业 LOGO 操作
IRF722

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

FAIRCHILD

仙童半导体

IRF722

TRANSISTORS N-CHANNEL

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET® technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling

IRF

IRF722

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF722

N-channel enhancement mode power mos transistors

文件:343.23 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

IRF722

N-Channel Power MOSFETs

文件:333.66 Kbytes Page:6 Pages

ARTSCHIP

IRF722

Trans MOSFET N-CH 400V 2.8A 3-Pin(3+Tab) TO-220

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF722

isc N-Channel MOSFET Transistor

文件:45.31 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications The SO-

IRF

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8

IRF

HEXFET Power MOSFET

INFINEON

英飞凌

Ultra Low On-Resistance

文件:189.22 Kbytes Page:7 Pages

IRF

N-channel enhancement mode power mos transistors

文件:343.23 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

文件:459.36 Kbytes Page:15 Pages

NSC

国半

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

文件:459.36 Kbytes Page:15 Pages

NSC

国半

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

文件:459.36 Kbytes Page:15 Pages

NSC

国半

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

文件:459.36 Kbytes Page:15 Pages

NSC

国半

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

文件:459.36 Kbytes Page:15 Pages

NSC

国半

IRF722产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    50000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    400V

  • Maximum Continuous Drain Current:

    2.8A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-8-2 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IRF
24+
SOP-8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
MICROCHIP/微芯
26+
NA
20000
公司只有正品,实单来谈
100
8
IR
2
92
IR
22+
SOP-8
8000
原装正品支持实单
IOR
25+
SOP-8
3200
全新原装、诚信经营、公司现货销售
IOR
24+
SOP8
10000
IR
2402+
SOP8
8324
原装正品!实单价优!
IOR
22+
SOP-8
1000
全新原装现货!自家库存!
IR
17+
SO-8
6200
100%原装正品现货
IR
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百

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