位置:首页 > IC中文资料第5676页 > IRF722
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF722 | N-Channel Power MOSFETs, 3.0 A, 350-400 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS | Fairchild 仙童半导体 | ||
IRF722 | TRANSISTORS N-CHANNEL 400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET® technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling | IRF | ||
IRF722 | 400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package 400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF722 | N-Channel Power MOSFETs 文件:333.66 Kbytes Page:6 Pages | ARTSCHIP | ||
IRF722 | N-channel enhancement mode power mos transistors 文件:343.23 Kbytes Page:6 Pages | STMICROELECTRONICS 意法半导体 | ||
IRF722 | Trans MOSFET N-CH 400V 2.8A 3-Pin(3+Tab) TO-220 | ETC 知名厂家 | ETC | |
IRF722 | isc N-Channel MOSFET Transistor 文件:45.31 Kbytes Page:2 Pages | ISC 无锡固电 | ||
HEXFET Power MOSFET Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO- | IRF | |||
HEXFET Power MOSFET Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 | IRF | |||
HEXFET Power MOSFET | Infineon 英飞凌 | |||
Ultra Low On-Resistance 文件:189.22 Kbytes Page:7 Pages | IRF | |||
N-channel enhancement mode power mos transistors 文件:343.23 Kbytes Page:6 Pages | STMICROELECTRONICS 意法半导体 | |||
WILMAR??Protective Relays - 700 Series Several types of Reverse Power Relays are available including relays sensitive to reverse reactive power (KVAR). WILMAR is the leading brand of reverse power relays. Our rugged sealed construction provides con tinuous and reliable operation unaffected by shock, vibration or other severe environmen | MACOM | |||
DPDT basic relay 文件:209.26 Kbytes Page:3 Pages | TELEDYNE 华特力科 | |||
DUAL ISOLATED DC/DC CONVERTER 文件:180.16 Kbytes Page:10 Pages | TI 德州仪器 | |||
DUAL ISOLATED DC/DC CONVERTER 文件:157.76 Kbytes Page:10 Pages | BURR-BROWN | |||
Capacity (20-hour) 218Ah 文件:257.57 Kbytes Page:1 Pages | GSYUASABATTERY |
IRF722产品属性
- 类型
描述
- 型号
IRF722
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
N-Channel Power MOSFETs, 3.0 A, 350-400 V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
23+ |
SO-8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
IR |
2450+ |
SOP-8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
IOR |
24+ |
SOP8 |
10000 |
||||
IOR |
25+ |
SOP-8 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IOR |
25+ |
PLCC |
18000 |
原厂直接发货进口原装 |
|||
IOR |
2025+ |
SOP8 |
3720 |
全新原厂原装产品、公司现货销售 |
|||
IR |
2402+ |
SOP8 |
8324 |
原装正品!实单价优! |
|||
IR |
24+ |
SOP8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
IOR |
22+ |
SOP-8 |
1000 |
全新原装现货!自家库存! |
|||
IR |
24+ |
SOP-8 |
39197 |
郑重承诺只做原装进口现货 |
IRF722规格书下载地址
IRF722参数引脚图相关
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