| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF722 | N-Channel Power MOSFETs, 3.0 A, 350-400 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS | FAIRCHILD 仙童半导体 |   | |
IRF722 | TRANSISTORS N-CHANNEL 400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET® technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling | IRF | | |
IRF722 | 400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package 400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IRF722 | N-channel enhancement mode power mos transistors 文件：343.23 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | |
IRF722 | N-Channel Power MOSFETs 文件：333.66 Kbytes Page：6 Pages | ARTSCHIP | | |
IRF722 | Trans MOSFET N-CH 400V 2.8A 3-Pin(3+Tab) TO-220 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IRF722 | isc N-Channel MOSFET Transistor 文件：45.31 Kbytes Page：2 Pages | ISC 无锡固电 | | |
HEXFET Power MOSFET Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO- | IRF | | ||
HEXFET Power MOSFET Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 | IRF | | ||
HEXFET Power MOSFET | INFINEON 英飞凌 | | ||
Ultra Low On-Resistance 文件：189.22 Kbytes Page：7 Pages | IRF | | ||
N-channel enhancement mode power mos transistors 文件：343.23 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | ||
10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier 文件：459.36 Kbytes Page：15 Pages | NSC 国半 | | ||
10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier 文件：459.36 Kbytes Page：15 Pages | NSC 国半 | | ||
10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier 文件：459.36 Kbytes Page：15 Pages | NSC 国半 | | ||
10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier 文件：459.36 Kbytes Page：15 Pages | NSC 国半 | | ||
10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier 文件：459.36 Kbytes Page：15 Pages | NSC 国半 | |
IRF722产品属性
- 类型
描述
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
50000mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
400V
- Maximum Continuous Drain Current：
2.8A
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
SOP8 |
2960 |
诚信交易大量库存现货 |
|||
IR |
22+ |
SOP-8 |
8000 |
原装正品支持实单 |
|||
IR |
0529 |
S0P8 |
3937 |
进口原装公司现货,假一罚十! |
|||
IR |
24+ |
SOP-8 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
IR |
24+ |
SOP8P |
6980 |
原装现货,可开13%税票 |
|||
IR |
26+ |
SOP8 |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
2021+ |
SO-8 |
9000 |
原装现货,随时欢迎询价 |
|||
IRF |
25+ |
SOP-8 |
145 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
2402+ |
SOP8 |
8324 |
原装正品!实单价优! |
|||
IRF |
24+ |
SOP-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
IRF722芯片相关品牌
IRF722规格书下载地址
IRF722参数引脚图相关
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IRF722数据表相关新闻
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