N-Channel Power MOSFETs, 2.25A, 350-400V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

N-Channel Power MOSFETs, 2.25 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

N-Channel Power MOSFETs

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Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R

isc N-Channel MOSFET Transistor

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Quad Precision, Low Cost, High Speed, BiFET Op Amp

GENERAL DESCRIPTION The AD713 is a quad operational amplifier, consisting of four AD711 BiFET op amps. These precision monolithic op amps offer excellent dc characteristics plus rapid settling times, high slew rates, and ample bandwidths. FEATURES AC performance 1 μs settling

Quad Precision, Low Cost, High Speed, BiFET Op Amp

GENERAL DESCRIPTION The AD713 is a quad operational amplifier, consisting of four AD711 BiFET op amps. These precision monolithic op amps offer excellent dc characteristics plus rapid settling times, high slew rates, and ample bandwidths. FEATURES AC performance 1 μs settling

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

Integrated Circuit Chroma Demod

Description: The NTE713 is a monolithic integrated circuit in a 14–Lead DIP type package that contains two sets of synchronous detectors with matrix circuits to achieve the R–Y, G–Y, and B–Y color difference output signals. The chroma input signal is applied to Pin3 and Pin4 while the oscillator

LOW DROPOUT REGULATOR

DESCRIPTION TK713xx is a low dropout, linear regulator with a built-in electronic switch. Since a PNP power transistor is used, dropout voltage is very low, making it possible to maintain a stable output voltage even as the battery voltage decreases. This allows longer battery life. The TK713xx