L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES\nLow noise figure\n  NF = 0.6 dB TYP. at f = 4 GHz\nHigh associated gain\n  Ga = 14 dB TYP. at f = 4 GHz\nGate width: Wg = 280µm\nGate Length: Lg = 0.3µm Low noise figure\n  NF = 0.6 dB TYP. at f = 4 GHz\nHigh associated gain\n  Ga = 14 dB TYP. at f = 4 GHz\nGate width: Wg = 280µm\nGate Length: Lg = 0.3µm;

L to Ku Band Low Noise N-Channel GaAs MESFET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

LOW NOISE L TO K-BAND GaAs MESFET

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L to Ku Band Low Noise N-Channel GaAs MESFET

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L to Ku Band Low Noise N-Channel GaAs MESFET

L to Ku Band Low Noise N-Channel GaAs MESFET

Quad Precision, Low Cost, High Speed, BiFET Op Amp

GENERAL DESCRIPTION The AD713 is a quad operational amplifier, consisting of four AD711 BiFET op amps. These precision monolithic op amps offer excellent dc characteristics plus rapid settling times, high slew rates, and ample bandwidths. FEATURES AC performance 1 μs settling

Quad Precision, Low Cost, High Speed, BiFET Op Amp

GENERAL DESCRIPTION The AD713 is a quad operational amplifier, consisting of four AD711 BiFET op amps. These precision monolithic op amps offer excellent dc characteristics plus rapid settling times, high slew rates, and ample bandwidths. FEATURES AC performance 1 μs settling

Integrated Circuit Chroma Demod

Description: The NTE713 is a monolithic integrated circuit in a 14–Lead DIP type package that contains two sets of synchronous detectors with matrix circuits to achieve the R–Y, G–Y, and B–Y color difference output signals. The chroma input signal is applied to Pin3 and Pin4 while the oscillator

LOW DROPOUT REGULATOR

DESCRIPTION TK713xx is a low dropout, linear regulator with a built-in electronic switch. Since a PNP power transistor is used, dropout voltage is very low, making it possible to maintain a stable output voltage even as the battery voltage decreases. This allows longer battery life. The TK713xx