DirectFET Power MOSFET

Description The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geomet

RoHs Compliant Containing No Lead and Bromide

Description The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geomet

60V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET MN 封装，额定电流为 86A。

RoHs Compliant Containing No Lead and Bromide

Description The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geomet

DirectFET

Power MOSFET

文件：645.23 Kbytes Page：10 Pages

Application Specific MOSFETs

文件：560.18 Kbytes Page：10 Pages

Ideal for 24V input Primary Side Forward Converters

文件：645.23 Kbytes Page：10 Pages

Ideal for 24V input Primary Side Forward Converters

文件：645.23 Kbytes Page：10 Pages

DirectFET

Power MOSFET

文件：645.23 Kbytes Page：10 Pages

Benchmark MOSFETs Product Selection Guide

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V.90 Modem Transformer

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General-Purpose Switching Device Applications

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