DirectFET Power MOSFET

Description The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout

采用 DirectFET SQ 封装的 30V 单 N 通道 HEXFET 功率 MOSFET，额定电流为 57 安培。

Lead-Free (Qualified up to 260째C Reflow)

Description The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

DirectFET

Power MOSFET

Description The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

Lead-Free (Qualified up to 260째C Reflow)

Description The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

Lead-Free (Qualified up to 260째C Reflow)

Description The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

DirectFET

Power MOSFET

Description The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo

Low Switching and Conduction Losses

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Class K-5

FEATURES/BENEFITS : • Easy to read imprint label for quick recognition and replacement • Low cost for high protection value

Time Delay/Class RK5

FEATURES/BENEFITS : • Time-delay • Current-limiting • AC & DC rated • Optional solid state SmartSpot blown fuse indicator • Time-delay for motor start-ups and transformer inrush currents without nuisance opening • Current-limiting for low peak let-thru current • Rejection-style design prev

Typically 10 關A Supply Current During Sleep Mode

Description ATA6629/ATA6631 is a fully integrated LIN transceiver, designed according to the LIN specification 2.0, 2.1 and SAEJ2602-2, with a low-drop voltage regulator (3.3V/5V/50 mA). The combination of voltage regulator and bus transceiver makes it possible to develop simple, but powerful, sl

6630B Series Single-Output, 80-100 W GPIB Power Supplies

文件：692.07 Kbytes Page：6 Pages

HELP3DC UMTS2100 (Band 1) LTE/WCDMA/CDMA/TD-SCDMA Linear PAM

文件：765.83 Kbytes Page：19 Pages