位置：首页 > IC中文资料第6614页 > IRF6623TR1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6623TR1 | Application Specific MOSFETs Description The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF |   | |
Ideal for CPU Core DC-DC Converters Description The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo | IRF | |
IRF6623TR1产品属性
- 类型
描述
- 型号
IRF6623TR1
- 功能描述
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
24+ |
QFN |
369 |
||||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
|||
IR |
0651+ |
QFN |
995 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IOR |
2006 |
DIRECTFET |
898 |
原装现货海量库存欢迎咨询 |
|||
IRF |
24+ |
SMD |
60000 |
全新原装现货 |
|||
IR |
24+ |
原厂封装 |
1000 |
原装现货假一罚十 |
|||
IR |
24+ |
PLL |
20000 |
原厂原装正品现货 |
|||
Infineon Technologies |
21+ |
DIRECTFET? ST |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
IRF6623TR1规格书下载地址
IRF6623TR1参数引脚图相关
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