位置：首页 > IC中文资料第6614页 > IRF6623TR1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6623TR1 | Application Specific MOSFETs Description The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF |   | |
Ideal for CPU Core DC-DC Converters Description The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo | IRF | |
IRF6623TR1产品属性
- 类型
描述
- 型号
IRF6623TR1
- 功能描述
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
IR |
2447 |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
|||
IOR |
24+ |
QFN |
369 |
||||
IR |
25+ |
PLL |
860000 |
明嘉莱只做原装正品现货 |
|||
Infineon Technologies |
22+ |
DirectFET? Isometric ST |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+24 |
PLL |
28950 |
专营原装正品SMD二三极管,电源IC |
|||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
65230 |
IRF6623TR1规格书下载地址
IRF6623TR1参数引脚图相关
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DdatasheetPDF页码索引
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