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IRF6618价格

参考价格:¥6.5000

型号:IRF6618TR1 品牌:IR 备注:这里有IRF6618多少钱,2026年最近7天走势,今日出价,今日竞价,IRF6618批发/采购报价,IRF6618行情走势销售排行榜,IRF6618报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF6618

HEXFET Power MOSFET

Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

IRF6618

Power MOSFET

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

IRF6618

30V N沟道HEXFET Power MOSFET,在DirectFET MT封装中具有20V栅极电压,额定电流为150 A。

INFINEON

英飞凌

DirectFET짰Power MOSFET 짰

Description The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

HEXFETPower MOSFET

● Application Specific MOSFETs ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Switching Losses ● Low Profile (

IRF

HEXFET Power MOSFET

Description The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

Power MOSFET

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

HEXFET Power MOSFET

Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

Lead-Free (Qualified up to 260째C Reflow)

Description The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

DirectFET짰Power MOSFET 짰

Description The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

Ideal for CPU Core DC-DC Converters

文件:250.25 Kbytes Page:9 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件:250.25 Kbytes Page:9 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件:250.25 Kbytes Page:9 Pages

IRF

Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier

Product Description Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes le

SIRENZA

DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER

Product Description Stanford Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes l

STANFORD

Video Switch Matrix for DVDs

Description The STV6618 is a highly integrated I²C bus-controlled video switch matrix, optimized for use in recordable Digital Video Disk applications or DVD players. It is adapted to video signals with 1H and 2H formats video routings. It provides required for connections to two external devices

STMICROELECTRONICS

意法半导体

IRF6618产品属性

  • 类型

    描述

  • OPN:

    IRF6618TRPBF

  • Qualification:

    Non-Automotive

  • Package name:

    DirectFET MT (MG-WDSON-5)

  • VDS max:

    30 V

  • RDS (on) @10V max:

    2.2 mΩ

  • RDS (on) @4.5V max:

    3.4 mΩ

  • ID @25°C max:

    170 A

  • QG typ @4.5V:

    43 nC

  • Polarity:

    N

  • VGS(th) min:

    1.35 V

  • VGS(th) max:

    2.35 V

  • VGS(th):

    1.64 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-19 9:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2450+
QFN
8850
只做原装正品假一赔十为客户做到零风险!!
IR
2013+
QFN
15800
授权分销IR系列场效应管,大量现货供应IRF6617TRPBF,正品原装,品质保证。
INFINEON/IR
15+
4800
DirectFET MT
IR
2023+
PLL
50000
原装现货
IR
25+
90000
全新原装现货
IR
22+
QFN
12245
现货,原厂原装假一罚十!
Infineon/英飞凌
2025+
MG-WDSON-5
8000
IR
25+
SMD
10000
全新原装现货库存
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
INFINEON/英飞凌
2022+
DirectFETMT
8000
只做原装支持实单,有单必成。

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