IRF6618价格

参考价格:¥6.5000

型号:IRF6618TR1 品牌:IR 备注:这里有IRF6618多少钱,2025年最近7天走势,今日出价,今日竞价,IRF6618批发/采购报价,IRF6618行情走势销售排行榜,IRF6618报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF6618

HEXFET Power MOSFET

Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

IRF6618

Power MOSFET

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

IRF6618

30V N沟道HEXFET Power MOSFET,在DirectFET MT封装中具有20V栅极电压,额定电流为150 A。

Infineon

英飞凌

DirectFET짰Power MOSFET 짰

Description The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

HEXFETPower MOSFET

● Application Specific MOSFETs ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Switching Losses ● Low Profile (

IRF

HEXFET Power MOSFET

Description The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

Power MOSFET

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

HEXFET Power MOSFET

Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

IRF

Lead-Free (Qualified up to 260째C Reflow)

Description The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

DirectFET짰Power MOSFET 짰

Description The IRF6618PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

Ideal for CPU Core DC-DC Converters

文件:250.25 Kbytes Page:9 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件:250.25 Kbytes Page:9 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件:250.25 Kbytes Page:9 Pages

IRF

CMOS LOW DROPOUT REGULATOR (LDO) 600mA ADJUSTABLE, ULTRA-LOW NOISE, ULTRA-FAST

DESCRIPTION A6618 series is a group of positive voltage output, low power consumption, low dropout voltage regulator. A6618 can provide output value adjustable from 0.8V to 5.0V. A6618 includes high accuracy voltage reference, error amplifier, current limit circuit and output driver mod

AITSEMI

创瑞科技

3A Ultra Low Dropout Linear Regulator

 GENERAL DESCRIPTION The AX6618 is a 3A ultra low dropout linear regulator. This product is specifically designed to provide well supply voltage for front-side-bus termination on motherboards and NB applications. The IC needs two supply voltages, a control voltage for the circuitry and a main su

AXELITE

亚瑟莱特

3A Ultra Low Dropout Linear Regulator

 GENERAL DESCRIPTION The AX6618 is a 3A ultra low dropout linear regulator. This product is specifically designed to provide well supply voltage for front-side-bus termination on motherboards and NB applications. The IC needs two supply voltages, a control voltage for the circuitry and a main su

AXELITE

亚瑟莱特

Low On-resistance, Fast Switching Characteristic

文件:100.58 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

HELP3E Dual-band IMT & EGSM WCDMA 3.4 V Linear Power Amplifier Module

文件:872.94 Kbytes Page:10 Pages

ANADIGICS

ANADIGICS, Inc

IRF6618产品属性

  • 类型

    描述

  • 型号

    IRF6618

  • 功能描述

    MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-21 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IOR
24+
QFN
5000
IRF6618
25+
1000
1000
Infineon(英飞凌)
24+
MG-WDSON-5
11177
支持大陆交货,美金交易。原装现货库存。
IR
19+
QFN
22800
IOR
2006
DIRECTFET
1439
原装现货海量库存欢迎咨询
IR
2450+
QFN
6540
只做原装正品假一赔十为客户做到零风险!!
Infineon Technologies
22+
DirectFET? Isometric MT
9000
原厂渠道,现货配单
IR
18+
DirectFET
85600
保证进口原装可开17%增值税发票
IOR
25+
DIRECTFE
4500
全新原装、诚信经营、公司现货销售
IR
22+
QFN
8000
原装正品支持实单

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