Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier

Product Description Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes le

DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER

Product Description RFMD’s CGA-6681(Z) is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage curren

DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER

Product Description Stanford Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes l

Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier

DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER

DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER

Product Description RFMD’s CGA-6681(Z) is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage curren

Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier

Product Description Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes le

DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER

HEXFET Power MOSFET

Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

Power MOSFET

Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge

Video Switch Matrix for DVDs

Description The STV6618 is a highly integrated I²C bus-controlled video switch matrix, optimized for use in recordable Digital Video Disk applications or DVD players. It is adapted to video signals with 1H and 2H formats video routings. It provides required for connections to two external devices