位置：首页 > IC中文资料第4229页 > IRF6616TR1PBF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6616TR1PBF | RoHS compliant containing no lead or bormide Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis | IRF |   | |
DirectFET Power MOSFET Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis | IRF | |
IRF6616TR1PBF产品属性
- 类型
描述
- 型号
IRF6616TR1PBF
- 功能描述
MOSFET MOSFT 40V 106A 5.0mOhm 29nC Qg
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
DIRECTFET |
8000 |
只做原装，欢迎询价，量大价优 |
|||
Infineon/英飞凌 |
24+ |
DIRECTFET |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon/英飞凌 |
25+ |
DIRECTFET |
30000 |
原装正品公司现货,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
DIRECTFET |
6820 |
只做原装,质量保证 |
|||
IR |
25+ |
SMD |
30000 |
原装现货,假一赔十. |
|||
Infineon(英飞凌) |
2447 |
DIRECTFET |
105000 |
4800个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon Technologies |
22+ |
DirectFET? Isometric MX |
9000 |
原厂渠道,现货配单 |
|||
IOR |
23+ |
SMD |
8650 |
受权代理!全新原装现货特价热卖! |
IRF6616TR1PBF规格书下载地址
IRF6616TR1PBF参数引脚图相关
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