DirectFET Power MOSFET

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

40V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET MX 封装，额定电流为106 A。

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

DirectFET Power MOSFET

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

文件：282.09 Kbytes Page：10 Pages

MOSFET N-CH 30V 19A DIRECTFET

Benchmark MOSFETs Product Selection Guide

文件：2.62043 Mbytes Page：6 Pages

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

SMPS PRIMARY IC

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

N-Channel Silicon MOSFET General-Purpose Switching Device

文件：40.47 Kbytes Page：4 Pages