DirectFET Power MOSFET

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

40V 单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET MX 封装，额定电流为106 A。

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

DirectFET Power MOSFET

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

Description The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with exis

RoHS compliant containing no lead or bormide

文件：282.09 Kbytes Page：10 Pages

MOSFET N-CH 30V 19A DIRECTFET

Benchmark MOSFETs Product Selection Guide

文件：2.62043 Mbytes Page：6 Pages

Single-package High Performance, Low Power AVR 8-bit Microcontroller with LIN

Description Atmel® ATA6616/ATA6617 is a System-in-Package (SiP) product, which is particularly suited for complete LIN-bus node applications. It supports highly integrated solutions for in-vehicle LIN networks. The first chip is the LIN-system-basis-chip (LIN-SBC) ATA6624, which has an integrated

8K/16K Flash Microcontroller with LIN Transceiver, 5V Regulator and Watchdog

文件：9.51944 Mbytes Page：308 Pages

8K/16K Flash Microcontroller with LIN Transceiver, 5V Regulator and Watchdog

文件：8.8889 Mbytes Page：274 Pages

Atmel ATA6616-EK/ATA6617-EK Development Board V1.1

文件：1.15934 Mbytes Page：20 Pages

HELP3E Dual-band 1 & 5, 6 CDMA/WCDMA 3.4 V Linear Power Amplifier Module

文件：716.64 Kbytes Page：11 Pages