DirectFET Power MOSFET

Description The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET packageis compatible with existing layout

采用 DirectFET ™ ST 封装的 40V 单 N 通道 StrongIRFET ™功率 MOSFET

StrongIRFET™ 功率 MOSFET 系列针对低 RDS(on) 和高电流能力进行了优化。 这些器件非常适合要求高性能和耐用性的低频应用。丰富的产品组合适合广泛的应用，包括直流电机、电池管理系统、逆变器和 DC-DC 变换器。 • 针对分销合作伙伴的广泛可用性进行了优化\n• 产品符合 JEDEC 标准\n• 高额定电流\n• 双面冷却能力\n• 封装高度低至 0.7 毫米\n• 低寄生 (1-2 nH) 电感封装\n• 100% 无铅（无 RoHS 豁免）;

DirectFET

Power MOSFET

Description The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing la

DirectFET Power MOSFET

Description The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET packageis compatible with existing layout

DirectFET

Power MOSFET

Description The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing la

Ideal for CPU Core DC-DC Converters

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Ideal for CPU Core DC-DC Converters

文件：275.75 Kbytes Page：10 Pages

Ideal for CPU Core DC-DC Converters

文件：275.75 Kbytes Page：10 Pages

Ideal for CPU Core DC-DC Converters

文件：275.75 Kbytes Page：10 Pages

Benchmark MOSFETs Product Selection Guide

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N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • 9.3 A, 30 V. RDS(ON) = 0.018 Ω @ V

Ultrahigh-Speed Switching Applications

N-Channel and P-Channel Silicon MOSFET Features • The MCH6614 incorporates two elements that are an N-channel and a P-channel MOSFETs that feature low ON resistance and high-speed switching, thereby enabling high-density mounting. • Low ON-resistance. • 2.5V drive.

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

SMPS PRIMARY IC

Low Profile 4 Mbit/s (FIR) Infrared Transceiver Module with independent Logic Supply Voltage

文件：162.68 Kbytes Page：7 Pages