位置:首页 > IC中文资料第6550页 > IRF6608
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
IRF6608 | lHEXFET Power MOSFET Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | ||
IRF6608 | Application Specific MOSFETs Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | ||
IRF6608 | lHEXFET Power MOSFET | Infineon 英飞凌 | ||
Application Specific MOSFETs Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | |||
DC Motor Forward/Reverse Dual Speed Electronic Governors ■ Overview The AN6608, the AN6609N and the AN6609NS are the electronic governors which incorporate the forward/reverse rotation and double speed controls of the DC-motors used for radio/cassette tape recorder, and the functions such as fast forward, rewind, brake, and pause. They are also availab | Panasonic 松下 | |||
300mA High PSRR, Low Noise LDO Regulator GENERAL DESCRIPTION The AX6608 is a low dropout, high PSRR, low noise linear regulator with very low quiescent. It can supply 300mA output current with low dropout about 250mV. The Device includes pass element, error amplifier, band-gap, current-limit and thermal shutdown circuitry. The charact | AXELITE 亚瑟莱特 | |||
Gepco a Belden Brand, Analog Audio Cable, 8 Pair 22 AWG (7x30) Bare Copper conductors, FEP Insulation, Individually Shielded, PVDF Jacket, CMP rated 文件:132.03 Kbytes Page:1 Pages | BELDEN 百通 | |||
20V Complementary MOSFET 文件:387.6 Kbytes Page:9 Pages | AOSMD 万国半导体 | |||
HELP3TM Band 8 / WCDMA 3.4 V / 28.5 dBm Linear PA Module 文件:567.34 Kbytes Page:13 Pages | ANADIGICS ANADIGICS, Inc |
IRF6608产品属性
- 类型
描述
- 型号
IRF6608
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
FQN |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
DirectFETtradeIso |
38400 |
||||
IRF6608 |
81535 |
81535 |
|||||
IR |
25+ |
铁面 |
18000 |
原厂直接发货进口原装 |
|||
IR |
23+ |
铁面 |
5000 |
原装正品,假一罚十 |
|||
INTERNATIONALRECTIFIER |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon Technologies |
23+ |
DirectFET? Isometric ST |
9000 |
原装正品,支持实单 |
|||
IR |
2447 |
DirectFET |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IOR |
06+ |
QFN |
914 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IRF6608芯片相关品牌
IRF6608规格书下载地址
IRF6608参数引脚图相关
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