型号 功能描述 生产厂家 企业 LOGO 操作
IRF6608

lHEXFET Power MOSFET

Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

IRF6608

Application Specific MOSFETs

Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

IRF6608

lHEXFET Power MOSFET

Infineon

英飞凌

Application Specific MOSFETs

Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

IRF

DC Motor Forward/Reverse Dual Speed Electronic Governors

■ Overview The AN6608, the AN6609N and the AN6609NS are the electronic governors which incorporate the forward/reverse rotation and double speed controls of the DC-motors used for radio/cassette tape recorder, and the functions such as fast forward, rewind, brake, and pause. They are also availab

Panasonic

松下

300mA High PSRR, Low Noise LDO Regulator

 GENERAL DESCRIPTION The AX6608 is a low dropout, high PSRR, low noise linear regulator with very low quiescent. It can supply 300mA output current with low dropout about 250mV. The Device includes pass element, error amplifier, band-gap, current-limit and thermal shutdown circuitry. The charact

AXELITE

亚瑟莱特

Gepco a Belden Brand, Analog Audio Cable, 8 Pair 22 AWG (7x30) Bare Copper conductors, FEP Insulation, Individually Shielded, PVDF Jacket, CMP rated

文件:132.03 Kbytes Page:1 Pages

BELDEN

百通

20V Complementary MOSFET

文件:387.6 Kbytes Page:9 Pages

AOSMD

万国半导体

HELP3TM Band 8 / WCDMA 3.4 V / 28.5 dBm Linear PA Module

文件:567.34 Kbytes Page:13 Pages

ANADIGICS

ANADIGICS, Inc

IRF6608产品属性

  • 类型

    描述

  • 型号

    IRF6608

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-4 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
FQN
8000
原装正品支持实单
IR
24+
DirectFETtradeIso
38400
IRF6608
81535
81535
IR
25+
铁面
18000
原厂直接发货进口原装
IR
23+
铁面
5000
原装正品,假一罚十
INTERNATIONALRECTIFIER
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon Technologies
23+
DirectFET? Isometric ST
9000
原装正品,支持实单
IR
2447
DirectFET
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Infineon Technologies
23+
原装
7000
IOR
06+
QFN
914
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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