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型号 功能描述 生产厂家 企业 LOGO 操作
IRF646

14A, 275V, 0.280 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

INTERSIL

IRF646

isc N-Channel Mosfet Transistor

·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for high voltage,high sp

ISC

无锡固电

IRF646

14A, 275V, 0.280 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching reg • 14A, 275V\n• rDS(ON)= 0.280Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• 275VDC Rating-120VAC Line System Operation\n• Related Literature\n- TB334 “Guidelines for Soldering S;

RENESAS

瑞萨

IRF646

Trans MOSFET N-CH 275V 14A 3-Pin(3+Tab) TO-220AB

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

POINN

HC648 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE, INV. HC646 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE

DESCRIPTION The M74HC646/648 are high speed CMOS OCTAL BUS TRANSCEIVERS AND REGISTERS, (3- STATE) fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED fMAX = 73 MHz (TYP.) AT VCC = 5 V ■

STMICROELECTRONICS

意法半导体

Octal bus transceiver/register; 3-state

GENERAL DESCRIPTION The 74HC/HCT646 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Independent register for A and B buses • Multiplexed real-time and stored data • Output c

PHILIPS

飞利浦

PHASE CONTROL THYRISTOR

文件:44.27 Kbytes Page:4 Pages

POSEICO

OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

文件:175.07 Kbytes Page:10 Pages

TI

德州仪器

IRF646产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    125000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    275V

  • Maximum Continuous Drain Current:

    14A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-5-20 19:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HAR
99+
TO-220
247
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
23+
TO-220
50000
全新原装正品现货,支持订货
IR
2023+
TO-220
50000
原装现货
FAIRCHILD/仙童
23+
TO-TO-220
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
24+
TO-220
500
HAR
23+
1172
66569
##公司主营品牌长期供应100%原装现货可含税提供技术
HARRIS
23+
SOP8
5000
原装正品,假一罚十
IR
23+24
TO-263
59630
主营原装MOS,二三级管,肖特基,功率场效应管
IR
23+
TO220
7000
VISHAY/威世
23+
AN
6500
专注配单,只做原装进口现货

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