14A, 275V, 0.280 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

isc N-Channel Mosfet Transistor

·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for high voltage,high sp

14A, 275V, 0.280 Ohm, N-Channel Power MOSFET

Trans MOSFET N-CH 275V 14A 3-Pin(3+Tab) TO-220AB

TREK 646

PRODUCT HIGHLIGHTS  Supports both Coulombic and Johnsen-Rahbek ESC technologies  User configurable for custom clamp and declamp sequences and wave shapes  Electrostatic chuck profiles can be uploaded to the unit and stored internally via a user-friendly software interface  Reduces backsid

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