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N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

STMICROELECTRONICS

意法半导体

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

STMICROELECTRONICS

意法半导体

IRF634L产品属性

  • 类型

    描述

  • 型号

    IRF634L

  • 功能描述

    MOSFET N-CH 250V 8.1A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-17 19:27:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-220
50000
专做原装正品,假一罚百!
ST
26+
TO-220F
60000
只有原装 可配单
ST/意法
04+
TO-220F
23000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
24+
TO-220
50000
只做原装正品现货 欢迎来电查询15919825718
IR
25+23+
TO-220
27729
绝对原装正品全新进口深圳现货
VishayIR
24+
TO-262
341
ST
TO-220F
68500
一级代理 原装正品假一罚十价格优势长期供货
IR
26+
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ST
17+
TO-220
6200
原装正品
23+
TO-220
55005
##公司主营品牌长期供应100%原装现货可含税提供技术

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