位置：首页 > IC中文资料第860页 > IRF634L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半导体 |   | ||
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li | STMICROELECTRONICS 意法半导体 | | ||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | | ||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | | ||
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational | STMICROELECTRONICS 意法半导体 | |
IRF634L产品属性
- 类型
描述
- 型号
IRF634L
- 功能描述
MOSFET N-CH 250V 8.1A TO-262
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
IR |
24+/25+ |
2000 |
原装正品现货库存价优 |
||||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
04+ |
TO-220F |
23000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
2511 |
TO-220F |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
TO-220 |
50000 |
专做原装正品,假一罚百! |
|||
ST |
TO-220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
24+ |
TO-220 |
50000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ST |
25+ |
TO-220F |
20000 |
原装，请咨询 |
|||
ST |
25+ |
TO-220F |
27500 |
原装正品,价格最低! |
IRF634L芯片相关品牌
IRF634L规格书下载地址
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IRF634L数据表相关新闻
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2019-4-27IRF630N
原装正品现货价格优惠
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IRF630N
2019-3-25
DdatasheetPDF页码索引
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