HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )

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Power MOSFET

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HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40Ω , ID = 9.0A )

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Low Frequencies

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COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

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