250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. • FEATURES • RDS(on) =1.1Ω • 3.8A and 250V • single pulse avalanche energy rated • SOA is Power- Dissipation Limited • Linear Transfe

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching;

Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ♦ Low RDS(ON) : 0.742 Ω (Typ.)

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Available in Tape and Reel

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

HEXFET Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Aval

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

HEXFET짰 Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Aval

HEXFET Power MOSFET

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HEXFET Power MOSFET

Power MOSFET

文件：217.97 Kbytes Page：9 Pages

Silicon Rectifier Fast Recovery, Dual, Center Tap

Description: The NTE623 and NTE624 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: Low Forward Voltage High Current C

High performance low power FM IF system with high-speed RSSI

DESCRIPTION The SA624 is pin-to-pin compatible with the SA604A, but has faster RSSI rise and fall time. The SA624 is an improved monolithic low-power FM IF system incorporating two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength indica

High performance low power FM IF system with high-speed RSSI

DESCRIPTION The SA624 is pin-to-pin compatible with the SA604A, but has faster RSSI rise and fall time. The SA624 is an improved monolithic low-power FM IF system incorporating two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength indica

8/16-Bit Micros

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REAL TIME EMULATION DEVELOPMENT TOOLS FOR ST6 MCU FAMILY

GENERAL DESCRIPTION The ST6 Real Time Development System is an advanced hardware development system designed and configured to provide comprehensive support for the ST6 family of MCUs. HARDWARE FEATURES ■ Supports ST62 and ST63 family ■ Real time emulation ■ 32 KBytes of emulation memory ■ B