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型号 功能描述 生产厂家 企业 LOGO 操作

Dual N and P Channel MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

IRF

丝印代码:NPEH;N and P-Channel Enhancement Mode Power MOSFET

Application = DC-DC Converters. m Load Switch. ® Power Management.

TECHPUBLIC

台舟电子

N- and P-Channel V (D-S) MOSFET

文件:2.22638 Mbytes Page:10 Pages

VBSEMI

微碧半导体

Small-Scale Control, Medium Speed Type, On-Chip LCD Driver 4-Bit Single Chip Microcomputer

Small-Scale Control, Medium Speed Type, On-Chip LCD Driver 4-Bit Single Chip Microcomputer

SANYO

三洋

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

MOTOROLA

摩托罗拉

PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

ONSEMI

安森美半导体

DOLBY PROLOGIC DECODER

DOLBY PROLOGIC DECODER

NPC

Dual, 10-Bit, 165Msps, Current-Output DAC

文件:446.96 Kbytes Page:18 Pages

MAXIM

美信

IRF5851TR产品属性

  • 类型

    描述

  • 型号

    IRF5851TR

  • 功能描述

    MOSFET N+P 20V 2.7A 6-TSOP

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    HEXFET®

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2026-3-17 22:30:00
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IR
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