Power MOSFET(Vdss = -20 V)

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Thi

Power MOSFET(Vdss = -20 V)

HEXFET짰 Power MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

Dual N and P Channel MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

N and P-Channel Enhancement Mode Power MOSFET

Application = DC-DC Converters. m Load Switch. ® Power Management.

N- and P-Channel V (D-S) MOSFET

文件：2.22638 Mbytes Page：10 Pages

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 30 (7/38) AWG Silver Plated Copper 0.012 b) Insulation 0.010 Wall, Nom. PTFE 0.032+/- 0.004 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, SLATE, VIOLET

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

Customer Specification

文件：69.74 Kbytes Page：3 Pages

Customer Specification

文件：226.42 Kbytes Page：3 Pages

16 CHANNEL VARIABLE GAIN AMPLIFIER (VGA) WITH OCTAL HIGH SPEED ADC

文件：1.25456 Mbytes Page：41 Pages