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型号 功能描述 生产厂家 企业 LOGO 操作
IRF5851

Power MOSFET(Vdss = -20 V)

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Thi

IRF

IRF5851

Power MOSFET(Vdss = -20 V)

INFINEON

英飞凌

HEXFET짰 Power MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

IRF

Dual N and P Channel MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

IRF

丝印代码:NPEH;N and P-Channel Enhancement Mode Power MOSFET

Application = DC-DC Converters. m Load Switch. ® Power Management.

TECHPUBLIC

台舟电子

N- and P-Channel V (D-S) MOSFET

文件:2.22638 Mbytes Page:10 Pages

VBSEMI

微碧半导体

Small-Scale Control, Medium Speed Type, On-Chip LCD Driver 4-Bit Single Chip Microcomputer

Small-Scale Control, Medium Speed Type, On-Chip LCD Driver 4-Bit Single Chip Microcomputer

SANYO

三洋

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

MOTOROLA

摩托罗拉

PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

ONSEMI

安森美半导体

DOLBY PROLOGIC DECODER

DOLBY PROLOGIC DECODER

NPC

Dual, 10-Bit, 165Msps, Current-Output DAC

文件:446.96 Kbytes Page:18 Pages

MAXIM

美信

IRF5851产品属性

  • 类型

    描述

  • 型号

    IRF5851

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    Power MOSFET(Vdss = +-20 V)

更新时间:2026-8-4 11:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
SOT23-6
35608
IR全新特价IRF5851TRPBF即刻询购立享优惠#长期有货
IR
26+
SMD
10000
原装现货 极速发货 一站式电子元器件BOM配单
INFINEON/英飞凌
2025+
TSOP6L
5000
原装进口价格优 请找坤融电子!
INFINEON/英飞凌
23+
TSOP-6
3000
专业供应MOS/LDO/晶体管/有大量价格低
IR
16+
TSOP-6
13560
进口原装现货/价格优势!
Infineon/英飞凌
26+
TSOP6L
18000
原装正品,可配单,支持实单
INFINEON/英飞凌
2019+
TSOP6L
78550
原厂渠道 可含税出货
IR
2019+PB
TSOP-6
13560
原装正品 可含税交易
IR
22+
原厂封装
9025
原装正品,实单请联系
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网

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