Power MOSFET(Vdss=-20V)

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

Power MOSFET(Vdss=-20V)

Ultra Low On-Resistance

文件：204.83 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：204.83 Kbytes Page：9 Pages

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

Nine Channel PMU for Mobile Phones

GENERAL DESCRIPTION The patent-pending ACT5810 is a complete, integrated power management solution that is ideal for CDMA and GSM mobile phones. This device integrates a linear Li+ battery charger with an internal power MOSFET, six low dropout linear regulators (LDOs), a reset output, and two N-C

ADJUSTABLE 60V LINEAR LED DRIVER

Features - 2.0V to 60V Wide Input Voltage Range - An External Resistor for Setting Current - Low Reference Voltage (VRSET = 0.5V) - Adjustable Sink or Source LED Current Up to 200mA/200mA (W-DFN2020-3/TO-252) - ±3 LED Current Tolerance @Room Temp - Parallel Devices to Increase Regulated Cur

HIGH PERFORMANCE FLEXIBLE 1 VALVE

文件：544.65 Kbytes Page：2 Pages

60W IEEE802.3bt PD Module

文件：689.45 Kbytes Page：22 Pages