Power MOSFET(Vdss=-20V)

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

Power MOSFET(Vdss=-20V)

Ultra Low On-Resistance

文件：204.83 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：204.83 Kbytes Page：9 Pages

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

Silicon Power Rectifier Diode, 12 Amp

Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Voltage Available

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device