Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A)

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

采用 TSOP-6（Micro 6）封装的 200V 单 N 沟道 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计;

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free ● Halogen-Free Applications ● High frequency DC-DC converters

Industry-standard pinout TSOP-6 Package

Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free ● Halogen-Free Applications ● High frequency DC-DC converters

Industry-standard pinout TSOP-6 Package

Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability

丝印代码：262P；N-Channel MOSFET 200V, 1.5A, 0.7

Features * Vbs =200V e = 1.5A « Roson £0.7Q @Ves = 10V

High frequency DC-DC converters

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200V 单个 N 通道 HEXFET Power MOSFET, 采用 TSOP-6 (Micro 6)封装

HEXFET Power MOSFET

文件：203.58 Kbytes Page：8 Pages

DC / DC Converter Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with an N-Channel Sillicon MOSFET (MCH3405) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed s

BiMOS II LATCHED DRIVERS

DABiC-IV, 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER The A6818– devices combine a 32-bit CMOS shift register, accompanying data latches and control circuitry with bipolar sourcing outputs and pnp active pull downs. Designed primarily to drive vacuum fluorescent displays, the 60 V and -40 mA outpu

DC/DC Converter Applications

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DIGITAL OUTPUT PHOTO REFLECTOR???

文件：171.96 Kbytes Page：5 Pages

High Efficiency Blue LED, 5 mm Untinted Non - Diffused Package

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