型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

IRF

N-Channel MOSFET Transistor

文件:338.75 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件:335.27 Kbytes Page:2 Pages

ISC

无锡固电

更新时间:2025-12-28 23:37:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
20540
保证进口原装现货假一赔十
Infineon(英飞凌)
24+
TO-220
12548
原厂可订货,技术支持,直接渠道。可签保供合同
INFINEON
2430+
TO-220
8540
只做原装正品假一赔十为客户做到零风险!!
INFINEON
25+
TO-220
6000
全新原装现货、诚信经营!
IR
24+
TO-220
3264
原装现货假一赔十
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRFB52N15DPBF即刻询购立享优惠#长期有货
IR
23+
TO-220
65400
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
15+
原厂原装
1500
进口原装现货假一赔十
IR
2025+
TO-220
5000
原装进口价格优 请找坤融电子!

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