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型号 功能描述 生产厂家 企业 LOGO 操作
IRF511

N-Channel Power MOSFETs, 5.5 A, 60-100V

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD

仙童半导体

IRF511

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

HARRIS

IRF511

N-Channel Enhancement-Mode Vertical DMOS Power FETs

N-Channel Enhancement-Mode Vertical DMOS Power FETs

SUTEX

IRF511

N-Channel Power Mosfets

文件:374.91 Kbytes Page:5 Pages

ARTSCHIP

IRF511

N-channel power MOSFET, 80V, 5.6A

RENESAS

瑞萨

IRF511

Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF511

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF511

isc N-Channel Mosfet Transistor

文件:45.33 Kbytes Page:2 Pages

ISC

无锡固电

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These d

ONSEMI

安森美半导体

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing

PANASONIC

松下

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing

PANASONIC

松下

IRF511产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    20000mW

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    60V

  • Maximum Continuous Drain Current:

    4A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-5-25 11:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
4500
只做原装正品现货 欢迎来电查询15919825718
IR
23+
TO-220
16868
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
TO-263
8000
只做原装现货
IR
23+
TO-220
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
22+
TO-220
89563
IR
24+
TO-220-3
8866
IR
22+
TO-263
20000
公司只做原装 品质保障
原装IR
24+
TO-220
5000
只做原装公司现货
VB
25+
TO-220
10000
原装现货假一罚十
IR
22+
TO-220
6000
十年配单,只做原装

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