TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance; superior reverse energy and dio

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 21A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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N-Channel Power MOSFET

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Repetitive Avalanche Ratings

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500V, N-CHANNEL

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isc N-Channel MOSFET Transistor

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Repetitive Avalanche Ratings

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?숿RANSISTORS THRU-HOLE (TO-204AA/AE)

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WIPER SEALS

DESCRIPTION The BECA 460 profile is a single acting wiper seal composed of a rubber wiping lip. APPLICATIONS Agriculture Mobile machinery Material handling - Lifting Hydraulic cylinders

Premier Supplier of Electronic Hardware

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High Accuracy, 100kHz and 1MHz Voltage to Frequency Converters

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High Accuracy, 100kHz and 1MHz Voltage to Frequency Converterss

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PICO SMF Very Fast-Acting Type Fuse 459 Series

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