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型号 功能描述 生产厂家 企业 LOGO 操作
IRF3708S

Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A)

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Comput

IRF

IRF3708S

SMPS MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Comput

KERSEMI

IRF3708S

High Frequency Buck Converters for Computer Processor Power

文件:147.91 Kbytes Page:11 Pages

IRF

SMPS MOSFET HEXFET짰Power MOSFET

文件:282.49 Kbytes Page:11 Pages

IRF

High Frequency DC-DC Isolated Converters

文件:283.45 Kbytes Page:11 Pages

IRF

High Frequency Buck Converters for Computer Processor Power

文件:147.91 Kbytes Page:11 Pages

IRF

Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A)

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Comput

IRF

Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A??

Applications • High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use • High Frequency Buck Converters for Computer Processor Power Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) at 4.5V VGS • Fully Characterized Avalanche

IRF

Mute detector IC for 3V sets

文件:155.94 Kbytes Page:8 Pages

ROHM

罗姆

Dual Non-Inverting Power Driver

文件:221.48 Kbytes Page:5 Pages

TI

德州仪器

IRF3708S产品属性

  • 类型

    描述

  • 型号

    IRF3708S

  • 功能描述

    MOSFET N-CH 30V 62A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-8-1 11:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
TO-263
90000
一级代理商进口原装现货、价格合理
IR
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
IR
2447
D2-PAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
23+
TO-263
52514
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
23+
TO-263
8000
专注配单,只做原装进口现货
IR
23+
TO-263
50000
全新原装正品现货,支持订货
IR
24+
D2-Pak
8866
IR
2023+
D2-PAK
50000
原装现货
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十

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