型号 功能描述 生产厂家 企业 LOGO 操作
IRF3708S

Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A)

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Comput

IRF

IRF3708S

SMPS MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Comput

KERSEMI

IRF3708S

High Frequency Buck Converters for Computer Processor Power

文件:147.91 Kbytes Page:11 Pages

IRF

High Frequency DC-DC Isolated Converters

文件:283.45 Kbytes Page:11 Pages

IRF

SMPS MOSFET HEXFET짰Power MOSFET

文件:282.49 Kbytes Page:11 Pages

IRF

High Frequency Buck Converters for Computer Processor Power

文件:147.91 Kbytes Page:11 Pages

IRF

Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A)

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Comput

IRF

Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A??

Applications • High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use • High Frequency Buck Converters for Computer Processor Power Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) at 4.5V VGS • Fully Characterized Avalanche

IRF

Mute detector IC for 3V sets

文件:155.94 Kbytes Page:8 Pages

ROHM

罗姆

Dual Non-Inverting Power Driver

文件:221.48 Kbytes Page:5 Pages

TI

德州仪器

IRF3708S产品属性

  • 类型

    描述

  • 型号

    IRF3708S

  • 功能描述

    MOSFET N-CH 30V 62A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-14 17:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO-263
20000
公司只做原装 品质保障
ir
23+
NA
2486
专做原装正品,假一罚百!
VBSEMI/微碧半导体
24+
TO263
7800
全新原厂原装正品现货,低价出售,实单可谈
IR
25+
TO-263
30000
代理全新原装现货,价格优势
IR
24+
D2-Pak
8866
IR
16+
TO-263
22
全新 发货1-2天
IR
26+
TSSOP
86720
全新原装正品价格最实惠 假一赔百
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ir
25+
500000
行业低价,代理渠道
IR
2023+
D2-PAK
50000
原装现货

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