TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-204AA/AE) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-s

isc N-Channel MOSFET Transistor

DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·suited for applications such as Switching power supplies,motor controls ,inverters, Choppers,audio ampl

N-Channel MOSFET Transistor

DESCRIPTION • silicon Gate for fast switching at elevate • rugged APPLICATIONS • suited for applications such as Switching power supplies,motor controls ,inverters, Choppers,audio amplifiers and high energy pulse circuits.

HiRel MOSFETs

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Repetitive Avalanche Ratings

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Repetitive Avalanche Ratings

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Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

HIGH SPEED DIFFRENTIAL COMPARATOR

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HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages