Inductors

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Inductors

isc N-Channel MOSFET Transistor

DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·suited for applications such as Switching power supplies,motor controls ,inverters, Choppers,audio ampl

N-Channel MOSFET Transistor

DESCRIPTION • silicon Gate for fast switching at elevate • rugged APPLICATIONS • suited for applications such as Switching power supplies,motor controls ,inverters, Choppers,audio amplifiers and high energy pulse circuits.

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-204AA/AE) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-s

采用 D2-Pak 封装的 100V 单 N 通道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n \n  \n  \n  ;

Inductors, Epoxy Conformal Coated, Axial Leaded

High performance ferrite core is used in this epoxy conformally coated choke which allows for inductance values to 1000 µH\nAxial lead type, small lightweight design\nSpecial magnetic core structure contributes to high Q and self-resonant frequencies;

Inductors, Epoxy Conformal Coated, Axial Leaded

FEATURES • High performance ferrite core is used in this epoxy conformally coated choke which allows for inductance values to 1000 μH • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies • Treated with epoxy resin

Repetitive Avalanche Ratings

文件：143.25 Kbytes Page：7 Pages

Repetitive Avalanche Ratings

文件：143.25 Kbytes Page：7 Pages

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.13 Kbytes Page：2 Pages

High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply

文件：257.62 Kbytes Page：9 Pages

High Efficiency Synchronous Rectification in SMPS

文件：293.44 Kbytes Page：9 Pages

High Efficiency Synchronous Rectification in SMPS

文件：293.44 Kbytes Page：9 Pages

High Efficiency Synchronous Rectification in SMPS

文件：293.44 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：47.51 Kbytes Page：2 Pages

封装/外壳：轴向 包装：卷带（TR） 描述：FIXED IND 100UH 275MA 1.8 OHM TH 电感器，线圈，扼流圈 固定电感器

封装/外壳：轴向 包装：卷带（TR） 描述：FIXED IND 1MH 100MA 17.4 OHM TH 电感器，线圈，扼流圈 固定电感器

Inductors

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