N-Channel Power MOSFETs, 15A, 350V/400V

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

isc N-Channel MOSFET Transistor

DESCRIPTION • silicon Gate for fast switching at elevate • rugged APPLICATIONS • high voltage,high speed applications such as off-line Switching power supplies,AC and DCmotor controls relay and solenoid driver.

N-CHANNEL POWER MOSFETS

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N-CHANNEL POWER MOSFETS

Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3

Trans MOSFET 400V 13A 3-Pin(2+Tab) TO-3

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

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Square Type

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LinCMOSE DUAL DIFFERENTIAL COMPARATOR

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