位置：首页 > IC中文资料第1012页 > IRF351
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF351 | N-Channel Power MOSFETs, 15A, 350V/400V
| FAIRCHILD 仙童半导体 |   | |
IRF351 | N-CHANNEL POWER MOSFETS FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard) | SAMSUNG 三星 | | |
IRF351 | isc N-Channel MOSFET Transistor 文件：49.05 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF351 | N-CHANNEL POWER MOSFETS 文件：91.64 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IRF351 | Trans MOSFET N-CH 350V 13A 3-Pin(2+Tab) TO-204AA | ETC 知名厂家 | ETC | |
IRF351 | N-Channel Power MOSFETs, 15A, 350V/400V | ONSEMI 安森美半导体 | | |
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt | IRF | | ||
HEXFET Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001) Applications ● Switch Mode Power Supply (SMPS) ● Uninterrupt | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) | INFINEON 英飞凌 | | ||
ROTARY JOINT MINIATURE, IN-LINE, COAXIAL, K CONNECTORS 文件：145.35 Kbytes Page：1 Pages | APITECH | | ||
MINIATURE, IN-LINE, COAXIAL, K CONNECTORS 文件：203.2 Kbytes Page：1 Pages | FILTRONIC | | ||
Round Head Centre Punches, 100mm 4in long. 文件：20.74 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Round Head Centre Punches, 100mm 4in long. 文件：20.74 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Round Head Centre Punches, 100mm 4in long. 文件：20.74 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
IRF351产品属性
- 类型
描述
- 型号
IRF351
- 功能描述
MOSFET N-CH 150V 41A TO-262
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-263 |
1625 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
IR |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
20+ |
D2-Pak |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+/25+ |
712 |
原装正品现货库存价优 |
||||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
|||
IR |
25+23+ |
TO263 |
13397 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
D2-PAK |
8000 |
原装正品支持实单 |
|||
IR |
TO-263 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
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IRF351规格书下载地址
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IRF351数据表相关新闻
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全新原装现货 支持第三方机构验证
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-28
DdatasheetPDF页码索引
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