N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

N-CHANNEL POWER MOSFETS

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

isc N-Channel MOSFET Transistor

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2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

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N-Channel Power MOSFETs

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Trans MOSFET N-CH 400V 2.8A 3-Pin(2+Tab) TO-3

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 1600 V Mean forward current 740 A Surge current 11 kA

Silicon NPN Transistor RF Power Output

Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: ● Output Powe

0.3 inch ( 7.62 mm ) DUAL DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVD-322/323 is 0.3 inch ( 7.62 mm ) height dual digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. High efficirncy red display has red face and red segment. Bringht red ,green, yellen and red orange displays have black face and white s

Precision Timers

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2.0 mm Series

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