HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

Planar-MOSFET

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

HF-band Fan-Out

文件：384.69 Kbytes Page：1 Pages

Heyco® Original Series-35 Liquid Tight Cordgrips

文件：264.32 Kbytes Page：1 Pages

FL MC 2000E (SM40) LC

文件：384.74 Kbytes Page：8 Pages

WASHERS

文件：68.27 Kbytes Page：1 Pages