位置:首页 > IC中文资料第6181页 > IRF233
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF233 | N-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard) | SAMSUNG 三星 | ||
IRF233 | 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica | INTERSIL | ||
IRF233 | N-Channel Power MOSFETs, 12A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V | FAIRCHILD 仙童半导体 | ||
IRF233 | N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF233 | N-Channel Power MOSFETs, 12 A, 150-200 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF233 | High Power,High Speed Applications 文件:48.23 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRF233 | N-Channel Power Mosfets 文件:155.57 Kbytes Page:6 Pages | ARTSCHIP | ||
IRF233 | N-CHANNEL POWER MOSFETS | ONSEMI 安森美半导体 | ||
Silicon NPN Transistor Video IF, Oscillator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . | NTE | |||
TRISILTM DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE | STMICROELECTRONICS 意法半导体 | |||
DC-DC Converters 50 to 200 Watts Product Highlights The VI-200 family, with over 14 million units shipped, is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Operating at frequencies up to 2 MHz, VI-200 family converters offer exceptional power density, efficiency, noise performance, reliabili | VICOR | |||
PLLatinum??Dual Frequency Synthesizer for RF Personal Communications 文件:392.2 Kbytes Page:17 Pages | NSC 国半 | |||
1.0 mm X 4.0 mm Series 文件:32.03 Kbytes Page:1 Pages | PANASONIC 松下 |
IRF233产品属性
- 类型
描述
- 型号
IRF233
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 8A I(D) | TO-204AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/HAR |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
IR |
23+ |
65480 |
|||||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
25+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
TO-3 |
10000 |
||||
INTERNATIONA |
05+ |
原厂原装 |
4246 |
只做全新原装真实现货供应 |
|||
IOR |
25+ |
TO-220 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
IR |
23+ |
TO-3 |
52728 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
23+ |
SOP14 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
23+ |
TO-3 |
8000 |
专注配单,只做原装进口现货 |
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