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型号 功能描述 生产厂家 企业 LOGO 操作
IRF233

N-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard)

SAMSUNG

三星

IRF233

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

INTERSIL

IRF233

N-Channel Power MOSFETs, 12A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

FAIRCHILD

仙童半导体

IRF233

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF233

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF233

High Power,High Speed Applications

文件:48.23 Kbytes Page:2 Pages

ISC

无锡固电

IRF233

N-Channel Power Mosfets

文件:155.57 Kbytes Page:6 Pages

ARTSCHIP

IRF233

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半导体

Silicon NPN Transistor Video IF, Oscillator

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . .

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

DC-DC Converters 50 to 200 Watts

Product Highlights The VI-200 family, with over 14 million units shipped, is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Operating at frequencies up to 2 MHz, VI-200 family converters offer exceptional power density, efficiency, noise performance, reliabili

VICOR

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

文件:392.2 Kbytes Page:17 Pages

NSC

国半

1.0 mm X 4.0 mm Series

文件:32.03 Kbytes Page:1 Pages

PANASONIC

松下

IRF233产品属性

  • 类型

    描述

  • 型号

    IRF233

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 8A I(D) | TO-204AA

更新时间:2026-3-17 20:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR/HAR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
IR
23+
65480
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
IR
25+
TOP220
4500
全新原装、诚信经营、公司现货销售
IR
24+
TO-3
10000
INTERNATIONA
05+
原厂原装
4246
只做全新原装真实现货供应
IOR
25+
TO-220
90000
一级代理商进口原装现货、价格合理
IR
23+
TO-3
52728
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
23+
SOP14
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
TO-3
8000
专注配单,只做原装进口现货

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