型号 功能描述 生产厂家 企业 LOGO 操作
IRF233

N-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard)

Samsung

三星

IRF233

N-Channel Power MOSFETs, 12A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

Fairchild

仙童半导体

IRF233

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

Intersil

IRF233

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF233

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF233

N-Channel Power Mosfets

文件:155.57 Kbytes Page:6 Pages

ARTSCHIP

IRF233

High Power,High Speed Applications

文件:48.23 Kbytes Page:2 Pages

ISC

无锡固电

IRF233

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半导体

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight D-coded black M12 Standard, shielded, 50 V AC / 60 V DC, 4 A; PUR green cable, 4-wires, 2x2x0.34 mm²

BELDEN

百通

Scotch짰 Automotive Refinish Masking Tape 233

文件:37.36 Kbytes Page:3 Pages

3M

CHOPPER STABILIZED AMPLIFER

文件:36.23 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Axial Lead and Cartridge Fuses - Designed to UL/CSA Standards

文件:135.74 Kbytes Page:2 Pages

Littelfuse

力特

CHOPPER STABILIZED AMPLIFIER

文件:99.98 Kbytes Page:1 Pages

INTRONICS

IRF233产品属性

  • 类型

    描述

  • 型号

    IRF233

  • 制造商

    Rochester Electronics LLC

  • 制造商

    Harris Corporation

  • 制造商

    International Rectifier

更新时间:2025-11-25 17:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
SOP14
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
IR
25+
TOP220
4500
全新原装、诚信经营、公司现货销售
IR
24+
TO-3
10000
INTERNATIONA
05+
原厂原装
4246
只做全新原装真实现货供应
IR
23+
65480
IR
23+
TO-3
52728
##公司主营品牌长期供应100%原装现货可含税提供技术
IOR
24+
TO-220
90000
一级代理商进口原装现货、价格合理
Infineon(英飞凌)
24+
TO204AA(TO3)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IR
23+
TO-3
8000
专注配单,只做原装进口现货

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