Ultra Low On-Resistance

Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 12 A RDS(ON)

Power MOSFET(Vdss=20V)

Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

500kHz Multi-Output, Low-Noise Power-Supply Controllers for Notebook Computers

General Description The MAX1901/MAX1902/MAX1904 are buck-topology, step-down, switch-mode, power-supply controllers that generate logic-supply voltages in battery-powered systems. These high-performance, dual/triple-output devices include on-board power-up sequencing, power-good signaling with

TAPE CARRIER LOW NOISE GaAs FET???

DESCRIPTION The MGF1902B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURE

1:9 Signal Distribution?

Description The SK1900 is an extremely fast, stable, and accurate low skew 1:9 clock / signal distributor featuring a synchronous enable, which allows the outputs to be turned off and on without the risk of an unpredictable output pulse. The D - flip-flop is triggered on the falling edge of the c

Load Share Controller

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