DESCRIPTION

The MGF1902B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

FEATURES

● Low noise figure NF min = 4.0 dB (MAX.) @ f = 12 GHz

● High associated gain GS = 5.0 dB (MAX.) @ f = 12 GHz

APPLICATION

S to X band low noise amplifiers and oscillators