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型号 功能描述 生产厂家 企业 LOGO 操作

Power MOSFET(Vdss=20V)

Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

IRF

500kHz Multi-Output, Low-Noise Power-Supply Controllers for Notebook Computers

General Description The MAX1901/MAX1902/MAX1904 are buck-topology, step-down, switch-mode, power-supply controllers that generate logic-supply voltages in battery-powered systems. These high-performance, dual/triple-output devices include on-board power-up sequencing, power-good signaling with

MAXIM

美信

TAPE CARRIER LOW NOISE GaAs FET???

DESCRIPTION The MGF1902B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURE

MITSUBISHI

三菱电机

1:9 Signal Distribution?

Description The SK1900 is an extremely fast, stable, and accurate low skew 1:9 clock / signal distributor featuring a synchronous enable, which allows the outputs to be turned off and on without the risk of an unpredictable output pulse. The D - flip-flop is triggered on the falling edge of the c

SEMTECH

先之科

Load Share Controller

文件:147.17 Kbytes Page:6 Pages

TI

德州仪器

IRF1902GPBF产品属性

  • 类型

    描述

  • 型号

    IRF1902GPBF

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-20 9:46:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
SOP-8
89630
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IOR
24+
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Infineon Technologies
21+
8-SO
4000
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2450+
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9850
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Infineon Technologies
22+
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9000
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IR
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IR
20+
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