位置:首页 > IC中文资料第763页 > IRF123
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF123 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF123 | 8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | ||
IRF123 | N-CHANNELPOWERMOSFETS FEATURES •LowRDs | SamsungSamsung semiconductor 三星三星半导体 | ||
IRF123 | IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF123 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF123 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF123 | N-ChannelPowerMosfets, 文件:338.75 Kbytes Page:5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
IRF123 | NanosecondSwitchingSpeeds 文件:48.39 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
CustomerSpecification Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled | ALPHAWIREAlpha Wire 阿尔法电线 | |||
CustomerSpecificationS Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.MPPE0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8ComponentsCabled | ALPHAWIREAlpha Wire 阿尔法电线 | |||
M.2Socket,H2.1AKey0.5PitchG/F,Black,Reel PerformanceandDescriptions: Theproductisdesignedtomeettheelectrical,mechanicalandenvironmentalperformancerequirementsspecification.Unlessotherwisespecified,alltestsareperformedatambientenvironmentalconditions. | ATTENDATTEND Technology Inc. 立威科技立威科技股份有限公司 | |||
GeneralPurposeTweezers 文件:3.67611 Mbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
3.6V/400mAh 文件:207.43 Kbytes Page:1 Pages | DBLECTRODB Lectro Inc 迪贝电子 |
IRF123产品属性
- 类型
描述
- 型号
IRF123
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
三星 |
23+ |
铁帽 |
28000 |
原装正品 |
|||
IR/MOT |
专业铁帽 |
TO-3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
|||
IR |
24+ |
NA/ |
3273 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO-3 |
10000 |
||||
IOR |
2025+ |
SOP8 |
3720 |
全新原厂原装产品、公司现货销售 |
|||
IOR |
05+ |
原厂原装 |
5751 |
只做全新原装真实现货供应 |
|||
Infineon(英飞凌) |
24+ |
TO-204 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
|||
IR |
24+ |
SO-8 |
2560 |
绝对原装!现货热卖! |
IRF123规格书下载地址
IRF123参数引脚图相关
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IRF123数据表相关新闻
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进口代理
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
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2020-1-12IR51H224-自激式半桥
特点·输出功率MOSFET在半桥配置·高侧栅极驱动器引导操作设计·自举二极管集成包(HD型)·精确的定时控制两个功率MOSFET匹配延迟获得50%的占空比匹配死区的1.2us·内部振荡器具有可编程的频率·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰·微功率启动说明该IR51H(四)XXX是完整的高电压,高转速,selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术,随着的HEXFET®功率MOSFET技术,使
2013-2-8
DdatasheetPDF页码索引
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