| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF123 | N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs | FAIRCHILD 仙童半导体 |   | |
IRF123 | N-CHANNEL POWER MOSFETS FEATURES • Low RDs | SAMSUNG 三星 | | |
IRF123 | 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica | INTERSIL | | |
IRF123 | IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IRF123 | N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IRF123 | N-Channel Power MOSFETs, 11 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. • Low RDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IRF123 | Nanosecond Switching Speeds 文件：48.39 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF123 | N-Channel Power Mosfets, 文件：338.75 Kbytes Page：5 Pages | ARTSCHIP | | |
IRF123 | Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
Silicon NPN Transistor General Purpose Audio Amplifier, Switch Silicon NPN Transistor General Purpose Audio Amplifier, Switch | NTE | | ||
Dual Retriggerable Monostable Multivibrator 文件：198.33 Kbytes Page：6 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | | ||
3-Amp, 5-Volt Positive Regulator 文件：203.43 Kbytes Page：8 Pages | NSC 国半 | |
IRF123产品属性
- 类型
描述
- Maximum Power Dissipation：
60000mW
- Maximum Drain Source Voltage：
80V
- Maximum Continuous Drain Current：
8A
- Configuration：
Single
- Channel Type：
N
- Category：
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三星 |
23+ |
50000 |
全新原装正品现货,支持订货 |
||||
IR/MOT |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
IRF |
24+ |
SOP-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RCA |
23+ |
TO2TOP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR/MOT |
专业铁帽 |
TO-3 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
|||
三星 |
23+ |
铁帽 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
23+ |
SOP-8P |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
24+ |
TO-3 |
10000 |
||||
IOR |
24+ |
SOP-8P |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
IR |
2023+ |
SOP8 |
50000 |
原装现货 |
IRF123芯片相关品牌
IRF123规格书下载地址
IRF123参数引脚图相关
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IRF123数据表相关新闻
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进口代理
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华富芯深圳智能科技有限公司
2022-2-7IRF1404ZPBF
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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IRA-S210ST01，全新原装现货当天发货或门市自取0755-82732291.
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2013-2-8
DdatasheetPDF页码索引
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