位置:首页 > IC中文资料第2420页 > IRF120
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF120 | 8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF120 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF120 | IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF120 | NanosecondSwitchingSpeeds DESCRIPTION •DrainCurrentID=8A@TC=25℃ •DrainSourceVoltage-:VDSS=100V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.3Ω(Max) •NanosecondSwitchingSpeeds APPLICATIONS •Switchingpowersupplies •Motorcontrols,InvertersandChoppers •Audioamplifiersandhighenergypul | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF120 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF120 | N-CHANNELPOWERMOSFETS FEATURES •LowRDs | SamsungSamsung Group 三星三星半导体 | ||
IRF120 | N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF120 | N-ChannelPowerMosfets, 文件:338.75 Kbytes Page:5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. | |||
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 | |||
THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY-PRESSIN 文件:106.68 Kbytes Page:1 Pages | WITTEN Witten Company, Inc. | |||
PrecisionWirewoundResistors 文件:318.25 Kbytes Page:2 Pages | Riedon Riedon Inc. | |||
TemperatureSensorsLineGuide 文件:736.09 Kbytes Page:11 Pages | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 |
IRF120产品属性
- 类型
描述
- 型号
IRF120
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
|||
IR |
23+ |
TO-3 |
3000 |
特价库存 |
|||
CHINA |
22+ |
TO-3 |
640 |
航宇科工半导体-央企合格优秀供方! |
|||
IR(国际整流器) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
IR |
23+ |
SOP23 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
TO-3 |
10000 |
|||||
IR |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
|||
IR |
23+ |
TO-3 |
5000 |
原装正品,假一罚十 |
|||
IRF120 |
270 |
270 |
|||||
IR |
21+ROHS |
TO-252(DPAK) |
43600 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IRF120规格书下载地址
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特点·输出功率MOSFET在半桥配置·高侧栅极驱动器引导操作设计·自举二极管集成包(HD型)·精确的定时控制两个功率MOSFET匹配延迟获得50%的占空比匹配死区的1.2us·内部振荡器具有可编程的频率·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰·微功率启动说明该IR51H(四)XXX是完整的高电压,高转速,selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术,随着的HEXFET®功率MOSFET技术,使
2013-2-8
DdatasheetPDF页码索引
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