IRF1018ESPBF价格

参考价格:¥3.1142

型号:IRF1018ESPBF 品牌:INTERNATIONAL 备注:这里有IRF1018ESPBF多少钱,2026年最近7天走势,今日出价,今日竞价,IRF1018ESPBF批发/采购报价,IRF1018ESPBF行情走势销售排行榜,IRF1018ESPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1018ESPBF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

IRF

IRF1018ESPBF

High Efficiency Synchronous Rectification in SMPS

文件:435.45 Kbytes Page:11 Pages

IRF

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

POLYFET

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

MOTOROLA

摩托罗拉

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

MOTOROLA

摩托罗拉

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

PHILIPS

飞利浦

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3

PHILIPS

飞利浦

IRF1018ESPBF产品属性

  • 类型

    描述

  • 型号

    IRF1018ESPBF

  • 功能描述

    MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-16 19:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR/VISHAY
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
IR
13+
TO-263
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
IR
25+
TO-263
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
25+23+
TO-263
14735
绝对原装正品全新进口深圳现货
INFINEON/英飞凌
2022+
D-PAK-3
6600
只做原装,假一罚十,长期供货。
INFINEON/英飞凌
2407+
MOS
30098
全新原装!仓库现货,大胆开价!
IR
22+
TO-263
20000
公司只做原装 品质保障
IR
11+
TO-263
502
全新 发货1-2天
Infineon
24+
NA
3000
进口原装正品优势供应

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