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IRF1018ESPBF价格
参考价格:¥3.1142
型号:IRF1018ESPBF 品牌:INTERNATIONAL 备注:这里有IRF1018ESPBF多少钱,2026年最近7天走势,今日出价,今日竞价,IRF1018ESPBF批发/采购报价,IRF1018ESPBF行情走势销售排行榜,IRF1018ESPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF1018ESPBF | HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching | IRF | ||
IRF1018ESPBF | High Efficiency Synchronous Rectification in SMPS 文件:435.45 Kbytes Page:11 Pages | IRF | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. | POLYFET | |||
Power Manager Gallium Arsenide Power Rectifier Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C | MOTOROLA 摩托罗拉 | |||
Power Manager Gallium Arsenide Power Rectifier Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C | MOTOROLA 摩托罗拉 | |||
N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A | PHILIPS 飞利浦 | |||
Low-voltage dual frequency synthesizer for radio telephones GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 | PHILIPS 飞利浦 |
IRF1018ESPBF产品属性
- 类型
描述
- 型号
IRF1018ESPBF
- 功能描述
MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
13+ |
TO-263 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
25+ |
TO-263 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
25+23+ |
TO-263 |
14735 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
2022+ |
D-PAK-3 |
6600 |
只做原装,假一罚十,长期供货。 |
|||
INFINEON/英飞凌 |
2407+ |
MOS |
30098 |
全新原装!仓库现货,大胆开价! |
|||
IR |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
IR |
11+ |
TO-263 |
502 |
全新 发货1-2天 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
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DdatasheetPDF页码索引
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