| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FETKY MOSFET / Schottky Diode Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining | IRF |   | ||
FETKY?줞OSFET / Schottky Diode Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining | IRF | | ||
FETKY MOSFET / Schottky Diode Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
7250 |
原装现货,当天可交货,原型号开票 |
|||
IOR |
23+ |
SOP |
20000 |
全新原装假一赔十 |
|||
IR |
24+ |
SOP-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IOR |
05+ |
SOP8 |
3544 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
24+ |
SOP-8 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
IR |
25+ |
SOP8 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
Infineon Technologies |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
|||
IOR |
25+23+ |
SOP8 |
36468 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
S0P8 |
8000 |
原装正品支持实单 |
|||
IR |
25+ |
PLCC-20 |
18000 |
原厂直接发货进口原装 |
IR7324D1规格书下载地址
IR7324D1参数引脚图相关
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IR7324D1数据表相关新闻
IRF1404PBF
进口代理
2025-4-2IR3889MTRPBF
The IR3889 OptiMOSTM系列IPOL 是一款易于使用、完全集成的 DC-DC 降压稳压器。IR3889 具有板载 PWM 控制器和集成自举二极管的 OptiMOS™ MOSFET 是一种小尺寸解决方案，可提供高效的电力传输。此外，它采用快速恒定导通时间（COT）控制方案，简化了设计工作并实现了快速控制
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华富芯深圳智能科技有限公司
2022-2-7IRA-S210ST01
IRA-S210ST01，全新原装现货当天发货或门市自取0755-82732291.
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2020-1-12IR51H224-自激式半桥
特点 ·输出功率MOSFET在半桥配置 ·高侧栅极驱动器引导操作设计 ·自举二极管集成包（HD型） ·精确的定时控制两个功率MOSFET匹配延迟获得50％的占空比匹配死区的1.2us ·内部振荡器具有可编程的频率 ·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰 ·微功率启动 说明 该IR51H（四）XXX是完整的高电压，高转速，selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术，随着的HEXFET®功率MOSFET技术，使
2013-2-8
DdatasheetPDF页码索引
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