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IR2184价格
参考价格：￥11.4969
型号：IR21844PBF 品牌：INTERNATIONAL 备注：这里有IR2184多少钱，2025年最近7天走势，今日出价，今日竞价，IR2184批发/采购报价，IR2184行情走势销售排行榜，IR2184报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR2184 | HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF |   | |
IR2184 | HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | |
IR2184 | Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | |
IR2184 | Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | |
IR2184 | HALF-BRIDGE DRIVER 文件：294.55 Kbytes Page：24 Pages | IRF | | |
IR2184 | HIGH AND LOW SIDE DRIVER 文件：370.01 Kbytes Page：21 Pages | IRF | | |
IR2184 | HALF-BRIDGE DRIVER 文件：375.29 Kbytes Page：24 Pages | Infineon 英飞凌 | | |
IR2184 | 封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8DIP 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | |
IR2184 | 600 V半桥栅极驱动器IC, 具有关断功能 | Infineon 英飞凌 | | |
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER 文件：294.55 Kbytes Page：24 Pages | IRF | | ||
HALF-BRIDGE DRIVER 文件：375.29 Kbytes Page：24 Pages | Infineon 英飞凌 | | ||
封装/外壳：14-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | ||
HALF-BRIDGE DRIVER 文件：375.29 Kbytes Page：24 Pages | Infineon 英飞凌 | | ||
600 V half-bridge gate driver IC with shutdown and programmable deadtime | Infineon 英飞凌 | | ||
HALF-BRIDGE DRIVER 文件：375.29 Kbytes Page：24 Pages | Infineon 英飞凌 | | ||
具有关断功能的 600 V 半桥栅极驱动器 IC | Infineon 英飞凌 | | ||
DSP Microcomputer GENERAL DESCRIPTION The ADSP-2184 is a single-chip microcomputer optimized for digital signal processing (DSP) and other high speed numeric processing applications. The ADSP-2184 combines the ADSP-2100 family base architecture (three computational units, data address generators and a program seq | AD 亚德诺 | | ||
Universal Bushings 文件：105.3 Kbytes Page：1 Pages | Heyco | | ||
Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON | | ||
Open/Closed Universal Bushings 文件：105.53 Kbytes Page：1 Pages | Heyco | | ||
High Voltage Switching Applications 文件：213 Kbytes Page：5 Pages | TOSHIBA 东芝 | |
IR2184产品属性
- 类型
描述
- 型号
IR2184
- 功能描述
IC DRIVER HIGH/LOW SIDE 8-DIP
- RoHS
否
- 类别
集成电路(IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关
- 系列
-
- 标准包装
50
- 系列
-
- 配置
低端
- 输入类型
非反相
- 延迟时间
40ns 电流 -
- 峰
9A
- 配置数
1
- 输出数
1 高端电压 -
- 最大（自引导启动）
-
- 电源电压
4.5 V ~ 35 V
- 工作温度
-40°C ~ 125°C
- 安装类型
表面贴装
- 封装/外壳
TO-263-6，D²Pak（5 引线+接片），TO-263BA
- 供应商设备封装
TO-263
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
SOP-14 |
7806 |
SSCP认证 原装现货 |
|||
IR |
22+ |
SOP14 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
25+ |
SOP8 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
24+/25+ |
2220 |
原装正品现货库存价优 |
||||
INFINEON/英飞凌 |
25+ |
SOP8 |
12496 |
IR原装正品IR2184STRPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
SOP8 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
IR |
16+ |
SOP-8 |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
22+ |
SOP8 |
5000 |
||||
Infineon(英飞凌) |
2024+ |
NA |
500000 |
诚信服务,绝对原装原盘 |
IR2184芯片相关品牌
IR2184规格书下载地址
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IR2184数据表相关新闻
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IR2184STRPBF
2024-11-20IR2184STRPBF原厂原标，现货
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2021-12-22IR2184PBF公司大量原装正品现货/随时可以发货！
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说明 在IR2183（4）（S）的高电压，高速功率MOSFET和IGBT与司机相关的高，低侧参考输出通道。专有HVIC和闩锁免疫坚固耐用的CMOS技术使单片建设。该逻辑输入与标准兼容CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，最低司机跨导。浮动通道可用来驱动高侧配置中的一个N沟道功率MOSFET或IGBT它可在高达600伏。 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠
2013-2-9
DdatasheetPDF页码索引
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