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IR21844S价格
参考价格：￥8.6149
型号：IR21844SPBF 品牌：International 备注：这里有IR21844S多少钱，2025年最近7天走势，今日出价，今日竞价，IR21844S批发/采购报价，IR21844S行情走势销售排行榜，IR21844S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR21844S | HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF |   | |
IR21844S | Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | |
IR21844S | HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | |
IR21844S | HALF-BRIDGE DRIVER 文件：375.29 Kbytes Page：24 Pages | Infineon 英飞凌 | | |
IR21844S | 封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 14SOIC 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | |
IR21844S | 600 V half-bridge gate driver IC with shutdown and programmable deadtime | Infineon 英飞凌 | | |
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
HALF-BRIDGE DRIVER Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
Gate drive supply range from 10 to 20V Description The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or L | IRF | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HALF-BRIDGE 14SOIC 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | ||
Plugs 文件：419.23 Kbytes Page：2 Pages | CEENORM | | ||
HALF-BRIDGE DRIVER 文件：690.76 Kbytes Page：25 Pages | IRF | | ||
HALF-BRIDGE DRIVER 文件：690.76 Kbytes Page：25 Pages | IRF | | ||
HALF- BRIDGE GATE DRIVER IN SO-14 文件：777.7 Kbytes Page：12 Pages | DIODES 美台半导体 | | ||
HALF-BRIDGE GATE DRIVER 文件：637.37 Kbytes Page：12 Pages | DIODES 美台半导体 | |
IR21844S产品属性
- 类型
描述
- 型号
IR21844S
- 功能描述
IC DRIVER HIGH/LOW SIDE 14-SOIC
- RoHS
否
- 类别
集成电路(IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关
- 系列
-
- 标准包装
50
- 系列
-
- 配置
低端
- 输入类型
非反相
- 延迟时间
40ns 电流 -
- 峰
9A
- 配置数
1
- 输出数
1 高端电压 -
- 最大（自引导启动）
-
- 电源电压
4.5 V ~ 35 V
- 工作温度
-40°C ~ 125°C
- 安装类型
表面贴装
- 封装/外壳
TO-263-6，D²Pak（5 引线+接片），TO-263BA
- 供应商设备封装
TO-263
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
SO-14 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IOR |
24+ |
SOP-14 |
8100 |
绝对原装现货,价格低,欢迎询购! |
|||
INFINEON/英飞凌 |
24+ |
SOP14 |
12000 |
进口原装 价格优势 |
|||
IR/INFINEON |
24+ |
SOP-8 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
INFINEON |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
IR |
24+ |
SOIC |
9600 |
原装现货,优势供应,支持实单! |
|||
INFINEON/英飞凌 |
22+ |
SOIC-14 |
2500 |
原装现货 |
|||
IR |
25+ |
SOP14 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
INFINEON/英飞凌 |
25+ |
SOP14 |
12496 |
IR原装正品IR21844STRPBF即刻询购立享优惠#长期有货 |
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说明 在IR2183（4）（S）的高电压，高速功率MOSFET和IGBT与司机相关的高，低侧参考输出通道。专有HVIC和闩锁免疫坚固耐用的CMOS技术使单片建设。该逻辑输入与标准兼容CMOS或LSTTL输出，下降到3.3V逻辑。输出驱动器具有高脉冲电流缓冲级，最低司机跨导。浮动通道可用来驱动高侧配置中的一个N沟道功率MOSFET或IGBT它可在高达600伏。 特点 •浮动通道设计为引导操作+600 V全面运作耐瞬态电压负dV / dt的免疫 •门极驱动电压范围从10至20V •欠
2013-2-9
DdatasheetPDF页码索引
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