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IR2181价格
参考价格：￥11.7879
型号：IR21814PBF 品牌：INTERNATIONAL 备注：这里有IR2181多少钱，2025年最近7天走势，今日出价，今日竞价，IR2181批发/采购报价，IR2181行情走势销售排行榜，IR2181报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IR2181 | HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF |   | |
IR2181 | HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS | IRF | | |
IR2181 | HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or | Infineon 英飞凌 | | |
IR2181 | 封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8DIP 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | |
IR2181 | HIGH AND LOW SIDE DRIVER 文件：370.01 Kbytes Page：21 Pages | IRF | | |
IR2181 | 600 V高边和低边栅极驱动器IC | Infineon 英飞凌 | | |
IR2181 | HIGH AND LOW SIDE DRIVER 文件：370.01 Kbytes Page：21 Pages | IRF | | |
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT | IRF | | ||
HIGH AND LOW SIDE DRIVER Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：370.01 Kbytes Page：21 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：370.01 Kbytes Page：21 Pages | IRF | | ||
封装/外壳：14-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 14DIP 集成电路（IC） 栅极驱动器 | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER 文件：370.01 Kbytes Page：21 Pages | IRF | | ||
600 V 高侧和低侧栅极驱动器 IC | Infineon 英飞凌 | | ||
600 V high-side and low-side gate driver IC | Infineon 英飞凌 | | ||
HIGH AND LOW SIDE DRIVER 文件：370.01 Kbytes Page：21 Pages | IRF | | ||
HIGH AND LOW SIDE DRIVER 文件：370.01 Kbytes Page：21 Pages | IRF | | ||
HEX MALE/FEMALE STANDOFFS [KEYSTONE] MALE/FEMALE THREADED STANDOFFS PC 104 MOUNTING KITS NYLON STANDOFFS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Customer Specification Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.010 2) Braid Data a) Nominal ID 1-3/8 (1.375) b) AWG of Ends 30 c) Number of Carriers 48 d) Nominal Percent Coverage 94 e) Total Number of Ends 528 f) Approx. Equiv. AWG | ALPHAWIRE | | ||
T-1 Subminiature Lamps T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin | GILWAY | | ||
Lowpass Filter Lowpass Filter Epoxy Package All leads .020” x .010” | KR | | ||
MALE/FEMALE THREADED STANDOFFS 文件：310.8 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | |
IR2181产品属性
- 类型
描述
- 型号
IR2181
- 功能描述
IC DRIVER HI/LOW 600V 1.9A 8-DIP
- RoHS
否
- 类别
集成电路(IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关
- 系列
-
- 标准包装
50
- 系列
-
- 配置
高端
- 输入类型
非反相
- 延迟时间
200ns 电流 -
- 峰
250mA
- 配置数
1
- 输出数
1 高端电压 -
- 最大（自引导启动）
600V
- 电源电压
12 V ~ 20 V
- 工作温度
-40°C ~ 125°C
- 安装类型
通孔
- 封装/外壳
8-DIP（0.300，7.62mm）
- 供应商设备封装
8-DIP
- 包装
管件
- 其它名称
*IR2127
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
DIP-14 |
5063 |
百分百原装正品,可原型号开票 |
|||
INFINEON |
100000 |
代理渠道/只做原装/可含税 |
|||||
INFINEON/英飞凌 |
25+ |
SOP-14 |
32000 |
INFINEON/英飞凌全新特价IR21814STRPBF即刻询购立享优惠#长期有货 |
|||
IR |
2450+ |
SOP-8 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
SOIC14N |
30000 |
全新原装现货特价销售,欢迎来电查询 |
|||
Infineon(英飞凌) |
2526+ |
SOIC-8 |
3000 |
全新、原装 |
|||
IR |
23+ |
SOP-8 |
4518 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
INFINEON |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
IR |
13TH |
SO-8 |
6000 |
原装正品现货 |
|||
IR |
24+ |
SOIC-14 |
20540 |
保证进口原装现货假一赔十 |
IR2181芯片相关品牌
IR2181规格书下载地址
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IR2181数据表相关新闻
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特点 •浮动通道高达+600 V •单片集成 •通过分流电阻感应的过流 •低IQBS允许自举电源 •独立快速1μsec过电流跳闸信号 •高共模噪声抑制能力 •输入过电压保护IGBT短路条件 •打开漏输出 IR2170（S）是单片设计过电流传感IC电机驱动应用。感应电机相电流通过一个外置分流电阻器，检测过流条件，和转让的信号偏低。 IR专有的高压隔离技术实施，使高带宽信号处理。
2012-12-5
DdatasheetPDF页码索引
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