650V CoolMOS CFD Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤660mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500V-900V CoolMOS™ N-Channel Power MOSFET

N-Channel MOSFET Transistor

• DESCRITION • High commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.66Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Superior Avalanche Rugged Technology

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650V N-Channel Super Junction MOSFET

文件：285.62 Kbytes Page：8 Pages

Superior Avalanche Rugged Technology

文件：188.97 Kbytes Page：7 Pages

650V N-Channel Super Junction MOSFET

文件：285.62 Kbytes Page：8 Pages