位置：首页 > IC中文资料第9665页 > IPW60R330P6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW60R330P6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤330mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IPW60R330P6 | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPW60R330P6 | MetalOxideSemiconductorFieldEffectTransistor 文件：3.09082 Mbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：3.09082 Mbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.33Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤330mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPW60R330P6产品属性
- 类型
描述
- 型号
IPW60R330P6
- 制造商
Infineon Technologies AG
- 功能描述
COOL MOS - Rail/Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2022+ |
TO-247 |
57550 |
||||
Infineon Technologies |
23+ |
TO2473 |
9000 |
原装正品，支持实单 |
|||
ALTERA |
2022+ |
QFP@ |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
Infineon Technologies |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
|||
INFINEON |
21+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+/23+ |
PG-TO247-3 |
7500 |
原装进口公司现货假一赔百 |
|||
isc |
2024 |
TO-247 |
10000 |
国产品牌isc,可替代原装 |
|||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon Technologies |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
|||
Infineon(英飞凌) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
IPW60R330P6芯片相关品牌
IPW60R330P6规格书下载地址
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IPW60R330P6数据表相关新闻
IPW65R041CFD
公司原装正品现货库存价格优势以质量求生存，以诚信谋发展
2022-5-12IPW60R041P6原装现货
IPW60R041P6原装正品
2021-8-11IPW65R041CFD英飞凌INFINEON原装现货，价格优势
ipw65r041cfd代理原装正品假一罚十
2019-11-1IPW60R080P7
IPW60R080P7，全新原装当天发货或门市自取0755-82732291.
2019-9-20IPW65R041CFD
MOSFETN-Ch700V68.5ATO247-3CoolMOSCFD2
2019-8-29IPW60R060P7
IPW60R060P7
2019-7-9
DdatasheetPDF页码索引
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