位置：首页 > IC中文资料 > IIPW60R330P6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IIPW60R330P6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤330mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.33Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
LGA-12 |
8860 |
只做原装,质量保证 |
|||
ST(意法) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
ST/意法半导体 |
21+ |
LGA-12 |
6000 |
原装正品,假一赔十! |
|||
6000 |
|||||||
ST |
22+ |
VFLGA-12221 |
16900 |
支持样品 原装现货 提供技术支持! |
|||
ST/意法 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
DIP |
8000 |
只做原装现货 |
|||
ST |
17+ |
SMD |
17900 |
加速计 |
|||
ST(意法半导体) |
2021+ |
LGA-12(2x2) |
499 |
IIPW60R330P6芯片相关品牌
IIPW60R330P6规格书下载地址
IIPW60R330P6参数引脚图相关
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制造商零件编号IHW30N160R2FKSA1 ManufacturerOrOEMInfineonTechnologies 描述IGBT1600V60A312WTO247-3 说明IGBTNPT，沟槽型场截止1600V60A312W通孔PG-TO247-3 对无铅/(RoHS)规范的达标情况无铅/符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL）1（无限） 最低订购数量240 标准包装
2020-12-14
DdatasheetPDF页码索引
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