位置：首页 > IC中文资料 > IPB60R330P6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB60R330P6 | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPB60R330P6 | IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPB60R330P6 | MaterialContentDataSheet 文件：33.26 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
MaterialContentDataSheet 文件：33.26 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.33Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤330mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
PG-TO263-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
Infineon(英飞凌) |
23+ |
TO263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
INFINEON |
23+ |
D2PAK/TO-263 |
8000 |
只做原装现货 |
|||
Infineon(英飞凌) |
2112+ |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
Infineon/英飞凌 |
2022+ |
PG-TO263-3 |
48000 |
只做原装,原装,假一罚十 |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6000 |
原装现货正品 |
|||
Infineon/英飞凌 |
2339+ |
PG-TO263-3 |
32280 |
原装现货 假一罚十！十年信誉只做原装！ |
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