N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

文件：1.61849 Mbytes Page：15 Pages

CoolMOS ™ C7 超结 MOSFET 在 PFC 和 LLC 拓扑中提供一流的性能

Metal Oxide Semiconductor Field Effect Transistor

文件：1.61849 Mbytes Page：15 Pages

N-Channel MOSFET Transistor

• DESCRITION • Suitable for hard and soft switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.18Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Combines the experience of the leading SJ MOSFET supplier with high class innovation • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.18Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust devic

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

Material Content Data Sheet

文件：33.1 Kbytes Page：1 Pages