MetalOxideSemiconductorFieldEffectTransistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

MaterialContentDataSheet

文件：33.1 Kbytes Page：1 Pages

IscN-ChannelMOSFETTransistor

文件：267.79 Kbytes Page：2 Pages

MetalOxideSemiconductorFieldEffectTransistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

MaterialContentDataSheet

文件：33.1 Kbytes Page：1 Pages

N-ChannelMOSFETTransistor

•DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

N-ChannelMOSFETTransistor

•DESCRIPTION •CombinestheexperienceoftheleadingSJMOSFETsupplier withhighclassinnovation •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevic

N-ChannelMOSFETTransistor

•DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation